Toshiba's Cascode GaN Discrete Power Device Realize Stable Operation and Simplifies System Design with Direct Gate Drive | Toshiba Electronic Devices & Storage Corporation | Asia-English
First' quasi-vertical gallium nitride trench MOSFET on six-inch silicon
GaN power devices, Part 1: Principles
Electronics | Free Full-Text | Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
How GaN FETs Have Become the Technology of Choice for Audiophiles - Technical Articles
What is a Gallium Nitride, GaN MOSFET » Electronics Notes
GaN FETs: The Technology of Choice for Audiophiles - Power Electronics News
GaN Power Devices: Potential, Benefits, and Keys to Successful Use | Mouser
Gallium Nitride Based Device Technology | NaMLab gGmbH
GAN063-650WSA 650-V-Galliumnitrid-FET mit 50 mΩ - Nexperia | Mouser
So unterscheiden sich GaN- und SiC-Transistoren
Simplified enhancement-mode GaN FET structure. The physical structure... | Download Scientific Diagram
Texas Instruments: Höhere Leistungsdichte dank integrierter GaN-Lösungen - Power Management - Elektroniknet
Smallest 100 V, 2 mΩ GaN FET in the World is Now Shipping from EPC
Trimming the on-resistance of GaN MOSFETs - News
EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN FET Family
So unterscheiden sich GaN- und SiC-Transistoren
Micromachines | Free Full-Text | Vertical GaN MOSFET Power Devices
Micromachines | Free Full-Text | Vertical GaN MOSFET Power Devices
Das unterscheidet die Bauelementekonzepte GaN, SiC, Superjunction
GaN Transistor - Galliumnitrid Transistor - einfach erklärt - F.M.H.
Rad-tolerant GaN FET handles 15 A, 900 V - Power Electronic Tips
Kaskodenbausteine aus Si-MOSFET und SiC-JFET
Leistungselektronik: Höherer Wirkungsgrad dank Galliumnitrid - Leistungshalbleiter - Elektroniknet
TRS-STAR | Distribution elektronischer Komponenten – 650V E-Mode GaN-Mosfet von WAYON ELECTRONICS
